Metamorphic III-V solar cells: recent progress and potential

摘要

Metamorphic semiconductor devices are commonly considered to have inferior electronic quality. However, recent development of compositionally graded buffers and junction structures have led to the achievement of high quality metamorphic solar cells exhibiting internal luminescence efficiencies over 90%. Optimizing the optical design of the solar cell becomes important in order to enhance photon recycling and open circuit voltage in these cells. In this paper we first present recent performance results for 1eV and 0.7eV GaInAs solar cells grown on GaAs substrates. Then an electro-optical model is used to assess the potential performance improvements in current metamorphic solar cells under different realizable design scenarios. The results show that significant improvements can be achieved by improving both the electronic quality and optics of these cells.