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Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

机译：以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性

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Peiqiang Xu; Yang Jiang; Yao Chen; Ziguang Ma; Xiaoli Wang; Zhen Deng; Yan Li; Haiqiang Jia; Wenxin Wang; Hong Chen;
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年度 2012
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1. High-quality GaN film and AlGaN/GaN HEMT grown on 4-inch Si(110) substrates by MOCVD using an ultra-thin AlN/GaN superlattice interlayer [J] . Shen X. Q., Takahashi T., Ide T., Physica status solidi, B. Basic research . 2015,第5期

机译：使用超薄AlN / GaN超晶格中间层通过MOCVD在4英寸Si（110）衬底上生长的高质量GaN膜和AlGaN / GaN HEMT
2. AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD [J] . Jian Tang, Xiaoliang Wang, Hongling Xiao, Physica status solidi . 2008,第9期

机译：具有通过MOCVD生长的AlN中间层的AlGaN / GaN / InGaN / GaN DH-HEMTs结构
3. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD [J] . Xiaoliang Wang, Guoxin Hu, Zhiyong Ma, Journal of Crystal Growth . 2007,第Jan期

机译：通过MOCVD生长的具有高迁移率GaN薄层的AlGaN / AlN / GaN / SiC HEMT结构
4. MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer [C] . Zhiyong Ma, Xiaoliang Wang, Guoxin Hu, International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006); 20061023-26; Shanghai(CN) . 2006

机译：MOCVD生长的AlGaN / AlN / GaN HEMT结构，具有成分渐变的AlGaN势垒层
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD [O] . Peiqiang Xu, Yang Jiang, Yao Chen, 2012

机译：以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性
7. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD [O] . Xu, Peiqiang, Jiang, Yang, Chen, Yao, 2012

机译：以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

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