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Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

机译：用于22nm体PMOS晶体管的HK和MG集成了源极和漏极中的高应变SiGe

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Guilei Wang; Jun Luo; Changliang Qin; Renrong Liang; Yefeng Xu; Jinbiao Liu; Junfeng Li; Huaxiang Yin; Jiang Yan; Huilong Zhu; Jun Xu; Chao Zhao; Henry H. Radamson; Tianchun Ye;
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1. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22?nm Bulk PMOS Transistors [J] . Guilei Wang, Jun Luo, Changliang Qin, Nanoscale Research Letters . 2017,第1期

机译：适用于22nm体PMOS晶体管的HK和MG集成源极和漏极中的高应变SiGe
2. Narrow Width and Length Dependence of SiGe and Sallow-Trench-lsolation Stress Induced Defects in 45 nm p-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain [J] . Chung-Yun Cheng, Yean-Kuen Fang, Jang-Cheng Hsieh, Japanese journal of applied physics . 2009,第4issue2期

机译：SiGe源极和漏极的45 nm p型金属氧化物半导体场效应晶体管中SiGe的窄宽和长度依赖性以及黄道孤立应力引起的缺陷
3. Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs [J] . Qin Changliang, Wang Guilei, Hong Peizhen, Solid-State Electronics . 2016,第SEPa期

机译：对凹入式e-SiGe源极/漏极进行工艺优化，以增强22 nm全高k /金属栅pMOSFET的性能
4. INTEGRATION OF A RECESSED SIGE SOURCE/DRAIN INTO A PMOS TRANSISTOR [C] . Lori Washington, Faran Nouri, Peter Verheyen, International Conference on Semiconductor Technology . 2005

机译：将嵌入的SiGe源/流量集成到PMOS晶体管中
5. Engineering Source/Channel/Drain Regions for PMOS TFTs in Flash Lamp Annealed Polycrystalline Silicon [D] . Garg, Viraj. 2019

机译：闪光灯退火多晶硅的PMOS TFT工程源/通道/漏极区
6. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors [O] . Guilei Wang, Jun Luo, Changliang Qin, 2017

机译：用于22nm体PMOS晶体管的HK和MG集成了源极和漏极中的高应变SiGe
7. High Performance pMOSFETs with High Ge Fraction Strained SiGe-heterostructure-channel and Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD [O] . Shinobu Takehiro, Masao Sakuraba, Junichi Murota, 2006

机译：具有高GE分数的高性能PMOSFET应变SiGE-异质结构 - 通过选择性B掺杂SiGE CVD形成的超肺源/漏极

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

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