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Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique

机译：通过使用双转移技术从蓝宝石转移到硅衬底来增强GaN基发光二极管的性能

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Jiang-Yong Zhang; Wen-Jie Liu; Ming Chen; Xiao-Long Hu; Xue-Qin Lv; Lei-Ying Ying; Bao-Ping Zhang;
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年度 2012
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1. Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes: Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes [J] . Natsuko Aota, Hideo Aida, Yutaka Kimura, Sensors and materials . 2014,第6期

机译：高性能基于GaN的发光二极管的蓝宝石衬底处理：蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
2. Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate [J] . Liu Wen-Jie, Hu Xiao-Long, Liu Yi-Jun Journal of materials science . 2019,第3期

机译：蓝宝石衬底上具有两步绝缘层方案的GaN基近紫外倒装芯片发光二极管的性能增强
3. Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO_2/Al_2O3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate [J] . Hongjun Chen, Hao Guo, Peiyuan Zhang, _Applied Physics Express . 2013,第2期

机译：通过铝镜和原子层沉积提高基于GaN的发光二极管的性能-具有图案化蓝宝石衬底的TiO_2 / Al_2O3分布式布拉格反射器背面反射器
4. Enhanced internal-quantum efficiency of GaN-based light-emitting diodes with a larger post-duty cycle of patterned-sapphire substrates [C] . Vin-Cent Su, Po-Hsun Chen, Ta-Cheng Hsu, Conference on Lasers and Electro-Optics . 2017

机译：氮化镓基发光二极管的内部量子效率更高，且图案化蓝宝石衬底的占空比更大
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique [O] . Jiang-Yong Zhang, Wen-Jie Liu, Ming Chen, 2012

机译：通过使用双转移技术从蓝宝石转移到硅衬底来增强GaN基发光二极管的性能
7. Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique [O] . Zhang Jiang-Yong, 张江勇, Liu Wen-Jie, 2012

机译：通过使用双转移技术从蓝宝石转移到硅衬底来增强GaN基发光二极管的性能

Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique

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