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AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

机译：通过热ALD技术生长具有AlN栅极电介质的AlGaN / GaN MISHEMT

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Xiao-Yong Liu; Sheng-Xun Zhao; Lin-Qing Zhang; Hong-Fan Huang; Jin-Shan Shi; Chun-Min Zhang; Hong-Liang Lu; Peng-Fei Wang; David Wei Zhang;
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1. High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD [J] . Liu Z. H., Ng G. I., Arulkumaran S., Electron Device Letters, IEEE . 2010,第2期

机译：ALD栅极绝缘子在硅上的AlGaN / GaN MISHEMT的高微波噪声性能
2. Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiN_x Gate Dielectric [J] . Lu Xing, Ma Jun, Jiang Huaxing, Electron Devices, IEEE Transactions on . 2015,第6期

机译：栅极原位 SiN _{x 栅电介质的后栅极自对准AlN / GaN MISHEMT的制备与表征}
3. Gate-first process compatible, high-quality in situ SiNx for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs [J] . Cheng Liang, Xu Weizong, Pan Danfeng, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2019,第30期

机译：门 - 第一工艺兼容，高质量的原位SINX用于Algan / GaN Mishemts的表面钝化和栅极电介质
4. Threshold voltage instabilities in AlGaN/GaN MOS-HEMTs with ALD-grown Al2O3 gate dielectrics: Relation to distribution of oxide/semiconductor interface state density [C] . M. Ťapajna, L. Válik, D. Gregušová, International Conference on Advanced Semiconductor Devices and Microsystems . 2016

机译：ALD生长的Al2O3栅极电介质的AlGaN / GaN MOS-HEMT中的阈值电压不稳定性：与氧化物/半导体界面态密度分布的关系
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique [O] . Xiao-Yong Liu, Sheng-Xun Zhao, Lin-Qing Zhang, 2015

机译：通过热ALD技术生长具有AlN栅极电介质的AlGaN / GaN MISHEMT
7. Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate [O] . Matthew Whiteside, Subramaniam Arulkumaran, Yilmaz Dikme, 2020

机译：用低温外延生长ALN介质栅极SI的Algan / GaN Mishemt的示范
8. Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs [R] . 2010

机译：自对准aLD alOx T栅极绝缘体，用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

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