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Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

机译：分子束外延在Si（100）上生长的GaAs / GaInAs核-多量子阱壳纳米线结构的室温光致发光的观察和可调性

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1. Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy [J] . Park Kwangwook, Ravindran Sooraj, Ju Gun Wu, Current applied physics: the official journal of the Korean Physical Society . 2016,第12期

机译：通过分子束外延在GaAs纳米线上生长的GaAs / GaInAs多量子阱壳的光学性质和载流子动力学
2. High‐spectral‐resolution pulsed photoluminescence study of molecular‐beam‐epitaxy‐grown GaAs/AlxGa1-xAs multi‐quantum‐well structures using a very‐low‐power tunable pulsed dye laser [J] . Journal of Applied Physics . 1986,第5期

机译：使用非常低功率的可调脉冲染料激光对分子束外延生长的GaAs / AlxGa1-xAs多量子阱结构进行高光谱分辨率脉冲光致发光研究
3. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy [J] . J. Treu, M. Speckbacher, K. Sailer, Applied Physics Letters . 2016,第5期

机译：通过选择性区域分子束外延生长的无催化剂InGaAs纳米线阵列中的可调谐合金成分和晶体结构
4. Temperature Dependent Photoluminescence Studies of Molecular Beam Epitaxy Grown Silicon δ-Doped Psesudomorphic AlGaAs/InGaAs/GaAs Quantum Wells [C] . T. Srinivasan, R. Muralidharan, S. N. Singh, International Workshop on the Physics of Semiconductor Devices . 2002

机译：温度依赖性光致发光研究的分子束外延生长硅δ掺杂的Psesudomorphic Algaas / InGaAs / GaAs量子阱
5. Micro-Photoluminescence (mu-PL) Study of Core-Shell GaAs/GaAsSb Nanowires grown by Self-Assisted Molecular Beam Epitaxy [D] . Sami, Md Shifat Us. 2015

机译：通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光（MU-PL）研究
6. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy [O] . Kwang Wook Park, Chang Young Park, Sooraj Ravindran, 2014

机译：通过分子束外延在Si（100）上生长的GaAs / GaInAs核-多量子阱壳纳米线结构的室温光致发光的观察和可调性
7. High-spectral-resolution pulsed photoluminescence study of molecular-beam-epitaxy-grown GaAs/AlxGa1−xAs multi-quantum-well structures using a very-low-power tunable pulsed dye laser [O] . Naganuma M., Song J. J., Kim Y. B., 1986

机译：使用非常低功率的可调脉冲染料激光对分子束外延生长的GaAs / AlxGa1-xAs多量子阱结构进行高光谱分辨率的脉冲光致发光研究

Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

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