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Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

机译：铁电薄膜Pb（Zr0.3，Ti0.7）O3的纳米压花技术在多位存储中的应用

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Zhenkui Shen; Zhihui Chen; Qian Lu; Zhijun Qiu; Anquan Jiang; Xinping Qu; Yifang Chen; Ran Liu;
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年度 2011
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1. Orientation-dependent piezoelectricity and domain characteristics of tetragonal Pb(Zr0.3,Ti0.7)0.98Nb0.02O3 thin films on Nb-doped SrTiO3 substrates [J] . Yu Qi, Li Jing-Feng, Sun Wei, Applied Physics Letters . 2014,第1期

机译：Nb掺杂SrTiO3基体上四方Pb（Zr0.3，Ti0.7）0.98Nb0.02O3薄膜的取向压电性和畴特征
2. Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray emission spectroscopy [J] . T. Schneller, H. Kohlstedt, A. Petraru, Journal of Sol-Gel Science and Technology . 2008,第1a2期

机译：用软X射线吸收和软X射线发射光谱研究化学溶液沉积的Pb（Zr0.3 Ti0.7 ）O3 薄膜的无定形到结晶相变
3. Chemical modifications of Pb(Zr0.3,Ti0.7)O3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films [J] . Theodor Schneller, Rainer Waser Journal of Sol-Gel Science and Technology . 2007,第3期

机译：Pb（Zr0.3，Ti0.7）O3前驱体溶液的化学修饰及其对所得薄膜形态和电学性质的影响
4. Measurement of nonlinear dielectric constants of Pb(Zr, Ti)O3 thin films for ferroelectric probe data storage technology [C] . Hiranaga Y., Cho Y. International Conference on Electronic Packaging Technology . 2014

机译：铁电探针数据存储技术中Pb（Zr，Ti）O 3 薄膜的非线性介电常数的测量
5. New modalities of strain-based engineering of ferroelectrics: Domain structure and properties of PbZr1?xTixO3 thin films [D] . Agar, Joshua C. 2015

机译：铁料应变工程的新模式：PBZR1的域结构与性质Xtixo3薄膜
6. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3Ti0.7)O3 for multi-bit storage application [O] . Zhenkui Shen, Zhihui Chen, Qian Lu, 2011

机译：铁电薄膜Pb（Zr0.3Ti0.7）O3的纳米压花技术在多位存储应用中的应用
7. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application [O] . Shen, Zhenkui, Chen, Zhihui, Lu, Qian, 2011

机译：铁电薄膜Pb（Zr0.3，Ti0.7）O3的纳米压花技术在多位存储中的应用

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

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