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Fabrication and characterization of a 4H-silicon carbide metal-semiconductor field effect transistor

机译：4H-碳化硅金属半导体场效应晶体管的制备与表征

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Includes bibliographical references (pages 96-99)

机译：包括书目参考（第96-99页）

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作者
Ardoin Ira;
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年度 2015
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正文语种 en_US
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1. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor [J] . Siddharth Potbhare, Neil Goldsman, Gary Pennington, Journal of Applied Physics . 2006,第4期

机译：4H-碳化硅横向金属氧化物半导体场效应晶体管的数值和实验表征
2. Fabrication and Characteristics of Ion-implanted 4H Silicon Carbide Metal-Semiconductor Field-Effect Transistors on a P-Type Epilayer [J] . Shou Guo Wang Chinese Journal of Physics . 2013,第2期

机译：P型外延层上离子注入4H碳化硅金属-半导体场效应晶体管的制备及特性
3. Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors [J] . D. P. Ettisserry, N. Goldsman, A. Akturk, Journal of Applied Physics . 2015,第4期

机译：4H-碳化硅金属氧化物半导体场效应晶体管中氧空位陷阱的负偏压和温度应力辅助激活
4. Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination [C] . Morgen S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) . 2006

机译：自旋相关复合观察4H-碳化硅金属氧化物半导体场效应晶体管的深层中心
5. Fabrication and characterization of fully implanted n(+)-p junction diode and metal semiconductor field effect transistor (MESFET) in 4H-silicon carbide. [D] . Tucker, Jesse Berkley. 2001

机译：在4H碳化硅中完全植入n（+）-p结二极管和金属半导体场效应晶体管（MESFET）的制造和表征。
6. Characterization Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications [O] . Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel 2010

机译：用于温度传感器的碳化硅结型场效应晶体管的特性建模和设计参数辨识
7. Simulation of Trapping Effects in 4H-Silicon Carbide Metal Semiconductor Field Effect Transistor (4H-SiC MESFET) [O] . Kumar Suman 2011

机译：4H-碳化硅金属半导体场效应晶体管（4H-SiC MESFET）的俘获效应的模拟
8. Low Frequency and Microwave Characterization of Submicron-Gate In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Heterojunction Metal-Semiconductor Field-Effect Transistors Grown by Molecular-Beam Epitaxy. [R] . Eastman, L. F., Kuang, J. B., Tasker, P. J., 1989

机译：亚微米栅极In（0.52）al（0.48）as / In（0.53）Ga（0.47）as / In（0.52）al（0.48）的低频和微波表征作为分子生长的异质结金属半导体场效应晶体管光束外延。

Fabrication and characterization of a 4H-silicon carbide metal-semiconductor field effect transistor

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