Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

摘要

In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics wasudcarried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surfaceudrecombination velocity), the construction and operation modes on the photosensitive structuresudcharacteristics in order to optimize them were investigated.