首页> 外文OA文献 >Influence of Radiation Induced Nano-defects on Critical Current of HTc Superconductors
【2h】

Influence of Radiation Induced Nano-defects on Critical Current of HTc Superconductors

机译:辐射诱导的纳米缺陷对HTc超导体临界电流的影响

摘要

Superconductors, including HTc materials are more and more frequently used in modern nuclear physicsuddevices. During the work of nuclear accelerators arises however the radiation of heavy ions or fastudneutrons, which can reach the superconducting windings, creating nano-sized defects. It influencesudproperties of superconductors. In the paper is given theoretical analysis of the influence of nano-defects onudthe critical current of HTc superconductors. New theoretical model of the critical current is proposed basedudon an analysis of the interaction of nano-defects acting as pinning centers with pancake vortices appearingudin HTc superconductors. Nano-defects from one side destroy the structure of superconducting materials,udwhich effect has negative meaning, while from other side anchorage of individual vortices or vortex latticeudon defects will improve critical current. These both opposite phenomena are considered for HTc materialsudand also for A15 type superconductors, in which superconductivity is strongly related to state of ordering ofudtransition metals as Nb, V in linear chains. The potential barrier against pancake vortices movement hasudbeen considered and calculations of an influence of sizes of nano-defects on current-voltage characteristicsudperformed. Expression for an energy barrier allowed also to determine the time stability of the magneticudvortex structure and flowing current, which effect has especial meaning in the superconducting shields.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35418
机译:超导体,包括HTc材料,在现代核物理 uddevices中越来越多地被使用。然而,在核加速器的工作过程中,会出现重离子或快中子的辐射,这些辐射可到达超导绕组,从而产生纳米级缺陷。它影响超导体的 udproperties。对纳米缺陷对HTc超导体临界电流的影响进行了理论分析。在对纳米缺陷作为钉扎中心与薄煎饼涡旋相互作用的基础上,提出了新的临界电流理论模型。纳米缺陷从一侧破坏了超导材料的结构,这具有负面意义,而从另一侧锚定单个涡流或涡流晶格缺陷会改善临界电流。 HTc材料 ud和A15型超导体都考虑了这两种相反的现象,其中超导性与线性链中Nb,V的过渡金属的有序状态密切相关。已经考虑了防止煎饼涡运动的潜在障碍,并且计算了纳米缺陷的大小对电流-电压特性的影响。势垒的表达式还可以确定磁/涡结构和流动电流的时间稳定性,这种效应在超导屏蔽中具有特殊意义。当引用该文档时,请使用以下链接http://essuir.sumdu .edu.ua / handle / 123456789/35418

著录项

  • 作者

    Sosnowski J.;

  • 作者单位
  • 年度 2012
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号