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Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route

机译:通过喷涂热解法在ITO衬底上生长纳米结构的Al掺杂SnO2薄膜

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摘要

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/24906
机译:我们报道了通过喷雾热解法生长的铝掺杂氧化锡的纳米结构薄膜,并对其物理性质进行了研究。喷涂过的薄膜在300°C的温度下从前体(SnCl4,5H2O)生长到铟锡氧化物(ITO)衬底上。溶液中Al的含量保持在3%。研究了结构,光学,电学和表面性能。 X射线图显示多晶结构和SnO2相的出现。可见光透射率超过85%,发现带隙为3.7 eV。通过3D原子力显微镜(AFM)观察来观察纳米尖端。使用霍尔效应测量系统(HMS),薄膜的电阻率非常低,为9.85 10 – 5Ω.cm,高电子浓度约为1021 cm – 3,迁移率达到20 cm2 / Vs。引用文档时,请使用以下链接http://essuir.sumdu.edu.ua/handle/123456789/24906

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