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Nanostructured Al doped Sn02 films grown onto ITO substrate via spray pyrolysis route

机译:纳米铝掺杂Sn02薄膜通过喷雾热解法生长在ITO衬底上

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摘要

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties are investigated. The sprayed films are grown onto ITO substrate at 300°C from (SnCl4, 5H2O)as precursor. The content of Aludis kept at 3 % in the solution. Structural, optical, electrical and surface properties are investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence.udThe visible transmitance exceeds 85%, the band gap is 3.7 eV.Nanotips are observed by 3D atomic force microscope (AFM) picture. The films exhibits very low resistivity found to be 9.85 10-5u10009f.cm, a high electron concentration around 1021cm-3, and low mobility 20 cm2/Vs.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20530
机译:我们报道了通过喷雾热解法生长的铝掺杂氧化锡纳米结构薄膜,并对其物理性能进行了研究。喷涂过的薄膜从(SnCl4,5H2O)作为前体在300°C的条件下生长到ITO基板上。溶液中Al udis的含量保持在3%。研究了结构,光学,电学和表面性能。 X射线衍射图显示多晶结构和SnO2相的存在。可见光透射率超过85%,带隙为3.7 eV。通过3D原子力显微镜(AFM)观察到纳米尖。该膜的电阻率非常低,为9.85 10-5 u10009f.cm,1021cm-3附近的电子浓度很高,迁移率低至20 cm2 / Vs。当引用该文献时,请使用以下链接http:// essuir.sumdu.edu.ua/handle/123456789/20530

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