Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation techniqueudand irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical propertiesudwere studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer.udThe increase in electron dose tends to decrease in transmittance and increase in refractive index of thinudfilm. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption ofudoptical energy at 550 nm wavelength. The samples irradiated 800 Gy tends to redeem the pristine properties.udOptical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV.
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