Volatile and Non-Volatile Single Electron Memory

摘要

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-electron circuit characteristics in our devices qualitatively, using single-electron Monte Carlo simulator SIMON.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/31927