Improvement of front side contact by light induced plating of c-Si solar cell

摘要

Screen printing technique using silver paste is one of the established industrial processes for manufacturingudsolar cell. But due to some limitation of this process conductivity of contact decreases. Light InducedudPlating (LIP) of c-Si solar cell is a critical process generally leading to decrease in series resistance of frontudside contact, increase in fill factor and efficiency associated with marginal reduction in short circuit currentud(Jsc). In this paper experimental results showing the decrease in series resistance but increase inudshort circuit current (Jsc) by using LIP process is reported. The LIP experiments are carried out using twouddifferent methods i.e. with and without bias. Even the unintentional deposition of silver nano particles onudthe front surface of the solar cell during LIP process is clearly shown.