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The Dependence of the Magnetoresistance on the Orientation of Three-layer Film Systems Based on Со / n / Со (n = Gd, Dy, Bi) in an External Magnetic Field

机译:在外部磁场中基于Со/ n /Со(n = Gd,Dy,Bi)的三层膜系统取向的磁阻依赖性

摘要

This work is devoted to general laws influence the orientation of the samples in an external magneticudfield on the magnetic and magnetoresistive properties of three-layer film systems based on Со / n / Соud(where n is intermediate layer of Gd, Dy and Bi). Found that the field dependence has anisotropicudcharacter, and most important magnetoresistance is observed in the perpendicular geometry measurementudfor all three-layer film systems. It is shown that the value of the coercive force and magnetoresistanceuddecreases and the value of film sensitivity to the magnetic field increases in the transition fromudperpendicular to the transverse geometry.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35349
机译:这项工作致力于根据一般定律来影响样品在外部磁场中的取向,从而影响基于Со/ n /Соud的三层薄膜系统的磁和磁阻特性(其中n是Gd,Dy的中间层和Bi)。发现场依赖性具有各向异性 udcharacter,并且在所有三层膜系统的垂直几何测量 ud中观察到最重要的磁阻。结果表明,在从垂直到横向的过渡过程中,矫顽力和磁阻的值会降低,并且薄膜对磁场的敏感度值会增加。当引用该文档时,请使用以下链接http:/ /essuir.sumdu.edu.ua/handle/123456789/35349

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