AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

摘要

In this research, we report on the measurement of the capacitance-voltage (C-V) characteristicsudAl / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysisudprocess. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronicudparameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28ud1014 cm – 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO /pSi/Al Schottky is determinedudand found to be 1012 (eV cm²) – 1. Calculated at 1 MHz, the interfacial layer thickness and depletion layerudwidth are of 760 Å and 0.28 m.