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Changing of defect’s structure and properties of superhard nanostructured Ti-Si-N coatings, fabricated using CPVD, before and after annealing

机译:退火前后使用CPVD制造的超硬纳米结构Ti-Si-N涂层的缺陷组织和性能变化

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摘要

Using such unique methods of analysis as slow positron beam (SPB), RBS, μ-PIXE (proton microbeam), XRD, SEM with EDS, XPS, nanohardness and elastic modulus measurements, we studied superhard nanostructure Ti-Si-N coatings, which were deposited using Cathodic-PVD method, before and after annealing at the temperature of 600°C for 30 minutes. It is shown in the paper that redistribution of N and Si occurs on the borders of nanograins after annealing, amorphous phase α-SiNx (Si3N4) is created, defects segregates on interfaces and forms vacancy-type clusters with rather high concentration from 5 × 10[16] cm-3 to 7.5 × 10[17] cm-3 due to thermodiffusion. Solid solution (Ti,Si)N and small concentration of α-SiN (close to XRD detection limits) are formed in the coating. Also it was obtained, that deflected mode is formed in the coating (compressive deformation equals to –2.6%), but after thermal annealing deformation reduces to a value of -2.3%. Size of nanograins of solid solution (Ti, Si)N increases from 12.5 nm to (13.2 ÷ 13.4) nm. 25 nm size grains increase their size to 28.5 nm after annealing (under another deposition regime).When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33948
机译:使用独特的分析方法,例如慢正电子束(SPB),RBS,μ-PIXE(质子微束),XRD,具有EDS的SEM,XPS,纳米硬度和弹性模量测量,我们研究了超硬纳米结构Ti-Si-N涂层,在600℃的温度下退火30分钟之前和之后,使用阴极-PVD方法沉积沉积物。文章显示,退火后,N和Si的重新分布发生在纳米晶粒的边界上,形成非晶相α-SiNx(Si3N4),缺陷在界面处偏析并形成浓度为5×10的高浓度空位型簇[16] cm-3至7.5×10 [17] cm-3由于热扩散。在涂层中形成固溶体(Ti,Si)N和少量α-SiN(接近XRD检测极限)。还可以得出,在涂层中形成了偏转模式(压缩变形等于–2.6%),但是在热退火之后,变形减小到了-2.3%的值。固溶体(Ti,Si)N的纳米晶粒尺寸从12.5 nm增加到(13.2÷13.4)nm。 25纳米尺寸的晶粒在退火后(在另一种沉积方式下)将其尺寸增加到28.5纳米。当引用该文档时,请使用以下链接http://essuir.sumdu.edu.ua/handle/123456789/33948

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