Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using nativeudprecursor hexamethyldisilazane with a nitrogen addition. Films were investigated by X-ray diffractionudspectroscopy, Fourier transform infrared spectroscopy and nanoindentation. It is established that all theudfilms were X-ray amorphous. An increase in nitrogen flow rate leads to increasing the number of Si-Nudbonds, which, in turn, promotes the rise of nanohardness and elastic modulus up to 20 GPa and 160 GPa,udrespectively. The optimum deposition parameters were established. The films can be recommended as hardudcoatings for strengthening cutting tools.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35320
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