Influence of alternating low voltage component on field photoemission current forma semiconductor tip

摘要

In this work we considered the influence of low alternating voltage of up to 100 V on the field photoemission process from a semiconductor tip under high voltage of 0.7-5.0 kV and photon excitation of 1.3 eV energy.udConsidered cathodes were made of high-resistivity silicon with p-type conductivity.