Basic Principles of Betavoltaic Elements and Prospects of their Development

摘要

The basic technical principles and means of increase in betavoltaitic elements effectiveness have been analyzed by comparing with their closest analogue – photoelectric semiconductor converters. The geometric parameters of radiation sources for these elements and their capacities have been estimated. It is shown the radiation source 63Ni foil thickness should not exceed a few micrometers, and maximum energyudconversion efficiency can achieve ~ 16 %.