Strong Room-Temperature Photoluminescence of Si-rich and N-rich Silicon-Nitride Films

摘要

Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasmaenhancedudchemical vapor deposition (PECVD). The optical and structural properties of these films haveudbeen investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopyud(TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Sirichudand N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N2 ambient has beenudshown by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed.udThe contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiNx has beenuddiscussed.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35162