Formation of the sensing element of the magnetic field sensor based on Cu and Cu

摘要

To form the sensing elements of the magnetic field sensors based onudmagneto-resistance effect, it was suggested to use a method of layerudcondensation in vacuum Co and Cu with the thickness of individual layersudfrom 1 to 20 nm and sequence depending on the functionality of the finishedudsensitive element. For high-speed digital sensors, it is reasonable to formudmultilayer nanostructures of a spin-valve “sandwich” typeudCo(4÷12nm)/Cu(4÷8 nm)/Co(20 nm)/S (S - substrate). Co magneto-roughudlower layer is additionally secured by high temperature of substrate TS = 950 Kudwhich provides high values of lower layer coercitivity Co. The sensor elementudbased on such a multilayer structure depending on the applied externaludmagnetic field can be located in two states “high” and “low” value ofudresistance that can provide a stable state of logic “zero” and “unity.”