In this paper proposed a method of forming the sensitive elements of sensors magnetic field as a spin-valve type multilayer structures based on Co and Cu. Presents the results of the study their magnetoresistive properties. It is shown that the spin-valve structure such as Co/Cu/Cu works most efficiently with a thickness of intermediate layer Cu 8 nm and the thickness of the magnetic layers 6 nm (top) and 20 nm (bottom).
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机译:本文提出了一种基于Co和Cu的自旋阀型多层结构形成传感器磁场敏感元件的方法。提出了研究其磁阻特性的结果。示出了诸如Co / Cu / Cu之类的自旋阀结构在中间层Cu的厚度为8nm并且磁性层的厚度为6nm(顶部)和20nm(底部)的情况下最有效地工作。
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