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Substructural Properties and Anisotropic Peak Broadening in Zn(1-x)MnxTe Films Determined by a Combined Methodology Based on SEM, HRTEM, XRD, and HRXRD

机译:基于SEM,HRTEM,XRD和HRXRD的组合方法确定的Zn(1-x)MnxTe薄膜的亚结构性质和各向异性峰展宽

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摘要

Lattice deformation and extended defects such as grain boundaries and dislocations affect the crystalline quality of films and can dramatically change material’s properties. In particular, magnetic and optoelectronic properties depend strongly on these structural and substructural characteristics. In this paper, a combined methodology based on SEM, HRTEM, XRD, and HRXRD measurements is used to determine and assess the structural and substructural characteristics of films. This combined methodology has been applied to Zn1-xMnxTe films grown on glass substrates by close-spaced vacuum sublimation. Nevertheless the methodology can be applied to a wide variety of materials and could become a useful characterization method which would be particularly valuable in semiconductor growth field. The knowledge of the structural and substructural characteristics can allow not only the optimization of growth parameters, but also the selection of specific samples having the desired characteristics (crystallite size, minimum dislocation content, etc.) for high-quality technological devices.
机译:晶格变形和扩展的缺陷(例如晶界和位错)会影响薄膜的晶体质量,并会大大改变材料的性能。尤其是,磁性和光电性质在很大程度上取决于这些结构和子结构特征。在本文中,基于SEM,HRTEM,XRD和HRXRD测量的组合方法用于确定和评估薄膜的结构和亚结构特征。这种组合方法已应用于通过近距离真空升华在玻璃基板上生长的Zn1-xMnxTe膜。然而,该方法可以应用于多种材料,并且可以成为有用的表征方法,这在半导体生长领域中特别有价值。结构和亚结构特征的知识不仅可以优化生长参数,还可以选择具有高质量技术设备所需特征(微晶尺寸,最小位错含量等)的特定样品。

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