Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

摘要

This paper describes the principle of operation, construction, architecture and fabrication of a new type of udmonolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of udfunctional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is udgiven. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array udwith high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of udamplification and signal processing matrix. Estimations and presents comparative characteristics are presented. udThey show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of ud-particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36255