Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application

摘要

The effect of indium on the characteristics of Ag / SnO2 : In / Si / Au Schottky diode (SD) is studied. Theudelectronic parameters, ideal factor, the effective barrier, flat band barrier height, the series resistance, theudsaturation current density of the diodes were extracted from the current voltage (I-V) and capacitance voltageud(C-V) characteristics. The series resistance (Rs) determined by Cheung method increases (508-534 Ω) with Inuddoping level while the barrier height still constant around 0.57 V. Norde approximation gives a similar barrierudheight values of 0.69 V but the series resistance reaches higher values of 5500 Ω.