Magnetic tunnel junctions as a storage element for memory device

摘要

Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused great research interest and has developed into a separate branch of materials science. The large tunneling magnetoresistance (TMR) observed in MTJs got much attention due to possible applications in non-volatile random access memories and next generation sensors of magnetic field.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35037