InAsSbP-based Quantum Dot Mid-Infrared Photodetectors: Fabrication, Properties and Applications

摘要

The mid-infrared photoconductive cells (PCC) made of n-InAs(100) crystals with InAsSbP quantum dots (QDs) on the PCC surface, as well as InAsSbP-based diode heterostructures with QDs on epilayer–substrate interface are reported. Both QDs-based semiconductor structures are considered as attractive devices for several mid-infrared applications. The liquid phase epitaxy, AFM, TEM and STM techniques are utilized for the growth of QDs and epitaxial cap layers and their characterization, respectively. Anoma-lous photovoltaic effect is detected in PCC with type-II QDs. The open-circuit voltage and short-circuit cur-rent are measured versus radiation power density of the He-Ne laser at λ 3.39, 1.15 and 0.63 μm wave-lengths. The formation of QDs leads to the increasing of the PCC’s sheet resistance up to one order and re-sults in red shift of the photoresponse spectrum. The QDs-based PCC’s voltage and current responsivity at room temperature are equal to 1.5 V/W and 82 mA/W, respectively, at zero bias and λ 3.39 μm. The main peak at 3.48 μm and additional peaks at 2.6 μm and 2.85 μm wavelengths revealed on QDs-based devices’ photoresponse and luminescence spectra allow to fabricate optical gas sensors, in particularly, for the me-thane, water vapor and carbon dioxide detection.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35354