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Quantum Confinement in Cadmium Selenide Multilayer Thin Films Using Physical Vapour Deposition Method

机译:物理气相沉积法对硒化镉多层薄膜的量子限制

摘要

Nanocrystals of CdSe have been produced in SiOx matrix layer and in ZnSe heterostructure layer byudthermal evaporation method. Structural studies were done by X-ray diffractometer. Quantum confinementudeffect of CdSe nanocrystals was analyzed from optical studies. Bulk CdSe has band-gap energy of 1.756 eVudthat can be shifted to larger values by reducing the crystal size to dimensions smaller than the Bohr radiusudof the exciton. Experimentally measured band-gap shifts with respect to the bulk value for quantum dotudthin films are compared with the predictions of the effective mass approximation model (i.e., Brus model)udand Quantum mechanical model. Sizes of the crystallites calculated from both models were coincident withudeach other.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27793
机译:通过高温蒸发法在SiOx基体层和ZnSe异质结构层中制备了CdSe纳米晶。结构研究是通过X射线衍射仪完成的。通过光学研究分析了CdSe纳米晶体的量子约束缺陷。体CdSe的带隙能量为1.756 eV ud,可通过将晶体尺寸减小到小于激子的玻尔半径 ud的尺寸来将其转换为更大的值。将相对于量子点 udthin薄膜的体积值的实验测量的带隙位移与有效质量近似模型(即Brus模型) udand量子力学模型的预测进行比较。从这两个模型计算出的微晶尺寸彼此一致。当引用该文档时,请使用以下链接http://essuir.sumdu.edu.ua/handle/123456789/27793

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