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Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

机译：GaN / AlGaN量子阱中界面粗糙度对光致发光半峰全宽的影响

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Wang Wei-Ying; Liu Gui-Peng; Jin Peng; Mao De-Feng; Li Wei; Wang Zhan-Guo; Tian Wu; Chen Chang-Qing;
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1. Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells [J] . Wang Wei-Ying, Liu Gui-Peng, Jin Peng, 中国物理：英文版 . 2014,第011期

机译：GaN / AlGaN量子阱中界面粗糙度对光致发光半峰全宽的影响
2. Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN [J] . G. A. Garrett, H. Shen, M. Wraback, Physica Status Solidi. A, Applied Research . 2005,第5期

机译：在横向过度生长的a平面和c平面GaN上变化阱宽度的GaN / AlGaN多量子阱的强度相关的时间分辨光致发光研究
3. The effect of electrons and phonons scattering from interface roughness and well-width fluctuations on low-field mobility of 2DEG in GaN/AlGaN [J] . Gokden S Physica, E. Low-dimensional systems & nanostructures . 2004,第1a2期

机译：界面粗糙度和阱宽起伏引起的电子和声子散射对GaN / AlGaN中2DEG低场迁移率的影响
4. A first report on the utility of the full width at half maximum of the photoluminescence spectrum from InxGa1−xN/GaN quantum wells [C] . Das T., Biswas D., Kabi S. Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008 . 2008

机译：关于In x Ga 1-x N / GaN量子阱的光致发光光谱的半峰全宽的效用的首次报道
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Interface Roughness, Carrier Localization, and Wave Function Overlap in c -Plane (In,Ga)N/GaN Quantum Wells: Interplay of Well Width, Alloy Microstructure, Structural Inhomogeneities, and Coulomb Effects [O] . Daniel S. P. Tanner, Joshua M. McMahon, Stefan Schulz 2018

机译：界面粗糙度，载波定位和波函数在C-平面（IN，GA）N / GaN量子阱中重叠：井宽，合金微观结构，结构不均匀性和库仑效应的相互作用

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

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