“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps

摘要

PiN diode design for oscillation-induced EMI suppression is proposed with novel structure. The proposed diode is lateral structure with traps using SOI substrate. Conventional PiN diode with vertical structure generates waveform oscillation and the oscillation lower power electronics system reliability. The design of proposed lateral structure with traps will contributes the performance improvement of all of bipolar power devices including IGBT.