首页> 外文OA文献 >Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

【2h】

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

机译：Al2O3 / AlGaN / GaN双异质结高电子迁移率晶体管中的介电和势垒厚度波动散射

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Ji Dong; Lu Yanwu; Liu Bing; Liu Guipeng; Zhu Qinsheng; Wang Zhanguo;
展开▼
作者单位

展开▼
年度 2013
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Dielectric and barrier thickness fluctuation scattering in Al_2O_3/AlGaN/GaN double heterojunction high-electron mobility transistors [J] . Dong Ji, Yanwu Lu, Bing Liu, Thin Solid Films . 2013,第maya1期

机译：Al_2O_3 / AlGaN / GaN双异质结高电子迁移率晶体管的介电和势垒厚度波动散射
2. Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors [J] . Ji Dong Applied Physics Letters . 2012,第13期

机译：Al2O3 / AlGaN / GaN双异质结高电子迁移率晶体管中的极化诱导的远程界面电荷散射
3. Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack [J] . Lee, Ching-Ting, Chiou, Applied Physics Letters . 2013,第8期

机译：具有氧化层/ Ta2O5 / Al2O3栅介电叠层的光电化学氧化处理AlGaN / GaN金属氧化物半导体高电子迁移率晶体管
4. A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement [C] . Rajabi Saba, Orouji Ali A., Moghadam Hamid Amini, 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies . 2011

机译：新型AlGaN / GaN / AlGaN双异质结高电子迁移率晶体管可提高性能
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors [O] . Yu-Shyan Lin, Shin-Fu Lin 2021

机译：钝化AlGaN / GaN高电子移动晶体管的大信号线性和高频噪声
7. Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors [O] . Ji D, Liu B, Lu YW, 2012

机译：Al2O3 / AlGaN / GaN双异质结高电子迁移率晶体管中的极化诱导的远程界面电荷散射

Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

著录项

引文网络

相似文献

相关主题

期刊订阅