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Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells

机译:全二元GaAs / AlAs短周期超晶格中的垂直传输以及不同量子阱的载流子俘获和去俘获动力学

摘要

Dynamics of vertical transport in all-binary GaAs/AlAs short-period superlattices (SPSs) have been investigatedas a function of temperature by steady-state and time-resolved photoluminescence (PL) experiments.When two different, enlarged quantum wells are embedded in the SPSs, photoexcited carrierscompete to be trapped into various localized exciton states and a variety of exciton radiative recombinationdynamics appears accompanied by phonon heating. Redistribution of carrier population in the differentwells by phonon scattering is significantly influenced by vertical miniband transport in the SPSs.Three different transport regimes are pointed out: (i) tunneling transport affected by irreversible carriercooling into deep localized states, (ii) interplay of carrier relaxation and phonon-assisted activation mediatedby an efficient miniband Bloch transport, and (iii) thermalization processes.
机译:通过稳态和时间分辨光致发光(PL)实验研究了全二元GaAs / AlAs短周期超晶格(SPS)中垂直传输的动力学随温度的变化。当两个不同的放大量子阱嵌入其中SPSs,光激发载流子竞争性地陷入各种局部激子状态,并且伴随着声子加热出现了各种激子辐射重组动力学。 SPS中垂直微带传输对声子散射在不同孔中载流子种群的重新分布有显着影响。指出了三种不同的传输方式:(i)受不可逆的载流子冷却影响的隧穿传输进入局部深层状态;(ii)载流子弛豫的相互作用高效的微带Bloch传输介导的声子辅助活化,以及(iii)热化过程。

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