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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

机译：MOCVD在n型（001）6H-SiC上生长的掺Si AlN膜的大场发射电流

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F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du;
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1. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC [J] . Liang F., Chen P., Zhao D. G., Chemical Physics Letters . 2016 ,第Null期

机译：MOCVD在n型（001）6H-SiC上生长的掺Si AlN膜的大场发射电流
2. Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD [J] . Liang F., Chen P., Zhao D. G., Materials Technology . 2017 ,第5a6期

机译：掺杂对N型6H-SIC生长的ALN薄膜场排放特性的影响
3. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC [J] . Feng Liang, Ping Chen, De-Gang Zhao, 中国物理：英文版 . 2016 ,第005期

机译：在n型6H-SiC上通过金属有机化学气相沉积法生长的Si掺杂AlN薄膜的正电子和小电子亲和力的观察
4. Large and stable field-emission current heavily Si-doped AIN grown by MOVPE [C] . Makoto Kasu, Naoki Kobayashi MRS Meeting . 2001

机译：由Movpe种植的大而稳定的野外排放电流严重掺杂AIN
5. Electrical characterization of N-type gallium nitride grown by metalorganic vapor deposition (MOCVD) on sapphire. [D] . Chong, Gabel. 2000

机译：通过蓝宝石上的金属有机气相沉积（MOCVD）生长的N型氮化镓的电学表征。
6. Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD [O] . Wenwang Wei, Yi Peng, Jiabin Wang, 2021

机译：MOCVD生长的ALN薄膜中应力和光学性质的温度依赖性
7. Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD [O] . F. Liang, P. Chen, D. G. Zhao, 2016

机译：硅掺杂对MOCVD在n型6H-SiC上生长的AlN薄膜场发射特性的影响
8. Study of substrate diffusion in epitaxial n-type CdSe films grown on GaAs (001) by pulsed laser ablation [R] . Park, J. , Rouleau, C. M. , Lowndes, D. H. 1998

机译：用脉冲激光烧蚀研究Gaas（001）上生长的外延n型Cdse薄膜的衬底扩散

Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

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