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Blue-green optically pumped GaN-based vertical cavity surface emitting laser

机译:蓝绿色光泵浦GaN基垂直腔表面发射激光器

摘要

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm(2) and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.
机译:用两个电介质Ta2O5 / SiO2分布的布拉格反射器制造了基于蓝绿色GaN的垂直腔表面发射激光器(VCSEL)。在光泵浦下,在室温下在498.8nm的波长处观察到激光作用。阈值能量密度和发射线宽分别为189 mJ / cm(2)和0.15 nm。结果表明,使用III族氮化物半导体可以实现蓝绿色VCSEL。

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