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Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

机译：GaN缓冲层厚度对通过金属有机化学气相沉积法生长的AlN / GaN分布布拉格反射器性能的影响

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National Hi-Tech Research and Development Program of China 2006AA03Z409

机译：中国国家高技术研究发展计划2006AA03Z409

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Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing);
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1. Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition [J] . G. S. Huang, T. C. Lu, H. H. Yao, Applied Physics Letters . 2006,第6期

机译：结合了通过有机金属化学气相沉积法生长的GaN / AlN超晶格的无裂纹GaN / AlN分布式布拉格反射器
2. Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition [J] . Yuh-Shiuan Liu, Shuo Wang, Hongen Xie, Applied Physics Letters . 2016,第8期

机译：通过金属有机化学气相沉积法生长具有GaN中间层的基于AlGaN的分布式布拉格反射器的应变管理
3. Influences of temperature ramping rate on GaN buffer layers and subsequent GaN overlayers grown by metalorganic chemical vapor deposition [J] . Dong-Sing Wuu, Ray-Horng, Wei-Hao Tseng Journal of Crystal Growth . 2000,第3期

机译：温度升高速率对GaN缓冲层及随后通过金属有机化学气相沉积法生长的GaN覆盖层的影响
4. AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy using GaN Insertion Layers [C] . L. E. Rodak, J. Peacock, J. Justice, Compound semiconductors for generating, emitting, and manipulating energy. . 2011

机译：使用GaN插入层通过金属有机气相外延生长的AlN / GaN分布式布拉格反射器
5. Nonpolar GaN-Based VCSELs with Lattice-Matched Nanoporous Distributed Bragg Reflector Mirrors [D] . Mishkat-Ul-Masabih, Saadat M. 2019

机译：基于非极性GaN的VCSEL与晶格匹配的纳米多孔分布式布拉格反射镜
6. Intersubband absorption properties of high Al content AlxGa1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition [O] . He Hui Sun, Feng Yun Guo, Deng Yue Li, 2012

机译：通过金属有机化学气相沉积法生长具有不同夹层的高Al含量AlxGa1-xN / GaN多量子阱的子带间吸收特性
7. Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition [O] . 2016

机译：采用金属有机化学气相沉积法生长GaN中间层的alGaN基分布布拉格反射镜的应变管理

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

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