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A high-power tapered and cascaded active multimode interferometer semiconductor laser diode

机译:大功率锥形级联有源多模干涉仪半导体激光二极管

摘要

A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer(MMI) cavity was designed and demonstrated. An output power as high as32 mW was obtained for the novel laser diode with a tapered and cascaded active MMI cavity, being much higher than the9.8 mW output power of the conventional single ridge F- P laser with the same material structure and the same device length due to the larger active area; and also being higher than the21.2 mW output power of the rectangular and cascaded active MMI laser diode with nearly the same structure, except for the shape of the MMI area. In addition, the tapered and cascaded active multimode interferometer laser showed stable single mode outputs up to the maximum output power.?2011 Chinese Institute of Electronics.
机译:设计并演示了具有锥形级联有源多模干涉仪(MMI)腔的高功率半导体激光二极管。具有锥形和级联有源MMI腔的新型激光二极管的输出功率高达32 mW,远高于具有相同材料结构和相同结构的传统单脊F-P激光器的9.8 mW输出功率。由于有效面积较大,设备长度增加;除了MMI区域的形状外,它还比具有几乎相同结构的矩形和级联有源MMI激光二极管的21.2 mW输出功率高。此外,锥形和级联有源多模干涉仪激光器在高达最大输出功率的情况下也显示出稳定的单模输出。?2011中国电子学会。

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