首页> 外文OA文献 >Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching
【2h】

Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

机译:通过各向异性化学刻蚀在绝缘体上硅上制造的低功耗热光可变光衰减器

摘要

A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. Multimode interferometers were used as power splitters and combiners in the MZ structure. In order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. Isolating grooves were introduced to reduce power consumption and device length. The device has a low power consumption of 210 mW and a response time of 50 mus. (C) 2004 Society of Photo-Optical Instrumentation Engineers.
机译:在绝缘体上硅(SOI)晶片上设计并制造了一种基于大截面硅波导的热光马赫曾德尔(MZ)可变光衰减器。多模干涉仪在MZ结构中用作功率分配器和组合器。为了获得光滑的界面,硅的各向异性化学蚀刻被用于制造波导。引入了隔离凹槽以减少功耗和设备长度。该设备的功耗低至210 mW,响应时间为50 mus。 (C)2004年光电仪器工程师协会。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号