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Boron-doped nanocrystalline silicon thin films for solar cells

机译:用于太阳能电池的掺硼纳米晶硅薄膜

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摘要

This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 degrees C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si: H were obtained from transmission and reflection spectra. By employing p(+) nc-Si: H as a window layer combined with a p' a-SiC buffer layer, a-Si: H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements. (C) 2011 Elsevier B. V. All rights reserved.
机译:本文报道了硼掺杂的氢化纳米晶硅(nc-Si:H)薄膜的结构,电子和光学性质。通过等离子体增强化学气相沉积(PECVD)在150℃的衬底温度下沉积膜。确定膜的结晶体积分数和暗电导率作为三甲基硼与硅烷的流量比的函数。从透射和反射光谱获得掺杂和未掺杂的nc-Si:H的光学常数。通过将p(+)nc-Si:H作为与ap'a-SiC缓冲层结合的窗口层,在ZnO:Al涂层玻璃基板上制造了基于a-Si:H的p-p'-in太阳能电池。器件特性是从电流-电压和频谱响应测量获得的。 (C)2011 Elsevier B. V.保留所有权利。

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