Real Time Monitoring System for Internal Process to Failure of High Power IGBT

摘要

A real time failure analysis system for widely used high power IGBT modules is proposed, which enables to inspect internal process to failure of the devices under power stress test as a movie. This system was realized by combining a scanning acoustic tomography (SAT/SAM), power stress controlling, device cooling, water jet system and chip temperature monitoring. This system successfully obtained internal images of a DUT under the load current of 200A.