Low-energy electron-beam irradiation of GaN-based quantum well structures

摘要

The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD depend significantly onlow-energy electron-beam irradiation (LEEBI), e. g., during cathodoluminescence (CL) investigations,when a certain exposure dose is exceeded. For unintentionally doped structures, we observe a LEEBIinducedactivation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantumefficiency and optical transition energy increases significantly by LEEBI. The electric field distributionin a p-n structure is changed towards the flat band condition during LEEBI indicating an electron-beaminducedpassivation of acceptors in the p-type layer.