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Analysis of steplike change of impedance for thin-film giant magnetoimpedance element with inclined stripe magnetic domain based on magnetic energy

机译:基于磁能的倾斜条纹磁畴薄膜巨磁阻元件阻抗阶梯式变化分析

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摘要

The phenomenon of steplike impedance change for thin-film giant magnetoimpedance (GMI) element was reported. The steplike change happens simultaneously with the appearance or the disappearance of stripe magnetic domain. This phenomenon is obtained for amorphous Co85Nb12Zr3 soft magnetic thin film in a rectangle shape with an in-plane uniaxial easy axis in the direction nearly 60° against the short-side axis of the element. The steplike change of impedance appears in a certain magnitude of external magnetic field. A high-sensitive magnetic field sensor can be realized by applying this phenomenon. In this study, a mechanism of the appearance or the disappearance of inclined stripe magnetic domain is discussed based on an analysis of magnetic domain energy, for the purpose of applying to a high-sensitivity magnetic field sensor. We assume these extremely different magnetic domains as (I) stripe domain with closure domain and (II) single domain, based on experimentally observed domain structures. The result of analysis shows that the magnetic energy of these two phases intersects each other in a certain external magnetic field, which means that the basis of steplike GMI of thin-film element is revealed as a structural change of magnetic domain based on magnetic energy.
机译:报道了薄膜巨磁阻抗(GMI)元件的阶梯状阻抗变化现象。阶梯状变化与条形磁畴的出现或消失同时发生。对于呈矩形的无定形Co85Nb12Zr3软磁性薄膜,在相对于元件的短边轴接近60°的方向上具有面内单轴易轴的情况下,可获得这种现象。阻抗的阶梯式变化出现在一定量的外部磁场中。通过应用这种现象可以实现高灵敏度的磁场传感器。在这项研究中,基于磁畴能量的分析,讨论了倾斜条纹磁畴出现或消失的机理,目的是将其应用于高灵敏度磁场传感器。基于实验观察到的磁畴结构,我们假设这些磁畴极为不同,即(I)带封闭磁畴的条带磁畴和(II)单磁畴。分析结果表明,这两个相的磁能在一定的外部磁场中相交,这意味着薄膜元件阶梯状GMI的基础是基于磁能的磁畴结构变化。

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