首页> 外文OA文献 >Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of $extit{m}$-plane InGaN/GaN quantum wells
【2h】

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of $extit{m}$-plane InGaN/GaN quantum wells

机译:$ textit {m} $平面InGaN / GaN量子阱的光致发光和光致发光激发光谱的理论和实验分析

摘要

We present a combined theoretical and experimental analysis of the optical properties of $extit{m}$-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown.
机译:我们提出了对$ textit {m} $平面InGaN / GaN量子阱的光学性质的理论和实验组合分析。在低温下通过光致发光和光致发光激发光谱研究了样品。光谱在激发光谱中的最低激子峰与光致发光光谱的峰之间显示出较大的斯托克斯位移。此行为表明强烈的载流子定位效应。这些实验结果通过紧密结合计算得到补充,这些计算考虑了合金的随机波动和库仑效应。理论数据解释了实验光谱的主要特征。此外,通过与基于虚拟晶体近似的计算进行比较,明确显示了由于随机合金波动而引起的载流子局部化效应的重要性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号