We demonstrate the growth of high-quality, continuous monolayer graphene on Cu foils using an open roll-to-roll (R2R) chemical vapor deposition (CVD) reactor with both static and moving foil growth conditions. N₂ not Ar was used as carrier gas to reduce process cost, and the concentrations of H₂ and CH₄ reactants were kept below the lower explosive limit to ensure process safety for reactor ends open to ambient. The carrier mobility of graphene deposited at a Cu foil winding speed of 5 mm/min was 5270-6040 cm² V‾¹s‾¹ at room temperature (on 50 µm × 50 µm Hall devices). These results will enable the in-line integration of graphene CVD for industrial R2R production.
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机译：我们展示了使用开放式卷对卷（R2R）化学气相沉积（CVD）反应器在静态和动态箔生长条件下在铜箔上高质量，连续单层石墨烯的生长。用N 2而不是Ar作为载气来降低工艺成本，并且将H 2和CH 3反应物的浓度保持在爆炸下限以下，以确保反应器端部向环境开放的工艺安全性。在室温下（在50 µm×50 µm霍尔器件上），以5 mm / min的Cu箔卷绕速度沉积的石墨烯的载流子迁移率为5270-6040cm²V -1 s -1。这些结果将使在线石墨烯CVD集成到工业R2R生产中。
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