首页> 外文OA文献 >On-chip single photon sources based on quantum dots in photonic crystal structures
【2h】

On-chip single photon sources based on quantum dots in photonic crystal structures

机译:基于光子晶体结构中量子点的片上单光子源

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

In order to harness the enormous potential of schemes in optical quantum information processing, readily scalable photonic circuits will be required. A major obstacle for this scalability is the monolithic integration of quantum light sources with the photonic circuit on a single chip. This dissertation presents the experimental demonstration of different in-plane single photon sources that allow for this integration with planar light circuits. To this end, the spontaneous recombination of excitons in single indium arsenide quantum dots was exploited to generate single photons. The emission into on-chip waveguides was achieved by the use of advanced two-dimensional photonic crystal structures. First, slow-light effects in a unidirectional photonic crystal waveguide were exploited to achieve on-demand single photon emission with a rate of up to 18.7 MHz, corresponding to a remarkable estimated internal device efficiency of up to 47%. Waveguide-coupled L3 defect cavities with record Q-factors of up to 5150were then studied for improved Purcell enhancement of the emission, and in-plane single photon generation from such a device was demonstrated. Finally, an electrically tunable, integrable quantum light source with a total tuning range of 1.9 nm was demonstrated by exploiting the quantum-confined Stark effect in an electrical PIN diode. These results are the first demonstrations of in-plane single photon emission at optical wavelengths and mark an important cornerstone for the realisationof fully integrated quantum photonic circuits in optical quantum information science.
机译:为了利用该方案在光量子信息处理中的巨大潜力,将需要易于扩展的光子电路。这种可扩展性的主要障碍是量子光源与光子电路在单个芯片上的单片集成。本文提出了不同平面内单光子源的实验证明,这些光子源可以与平面光路集成。为此,利用激子在砷化铟铟量子点中的自发重组来产生单个光子。通过使用先进的二维光子晶体结构,可以实现片上波导的发射。首先,利用单向光子晶体波导中的慢光效应来实现按需单光子发射,其速率高达18.7 MHz,相当于内部器件的显着估计效率高达47%。然后研究了记录的Q因子高达5150的波导耦合L3缺陷腔,以改善Purcell发射的增强,并证明了这种器件产生的面内单光子。最后,通过利用电PIN二极管中的量子限制斯塔克效应,展示了总调谐范围为1.9 nm的可电调谐,可集成的量子光源。这些结果是光波长内平面内单光子发射的首次证明,并标志着在光量子信息科学中实现完全集成的量子光子电路的重要基石。

著录项

  • 作者

    Schwagmann Andre;

  • 作者单位
  • 年度 2013
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号