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Asymmetric high-frequency carrier-type magnetic field sensor with thin-film head structure

机译:具有薄膜头结构的非对称高频载波型磁场传感器

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摘要

An asymmetric giant magneto-impedance (GMI) sensor head consisting of ferro/antiferromagnetic exchange coupling multilayered films was fabricated, and its sensor characteristics were measured. Five 100-nm-thick ferromagnetic Ni-78-Fe-13-Cu-5-Mo-4 layers were multilayered between five 50-nm-thick antiferromagnetic Ir-22-Mn-78 layers by radio-frequency sputtering. The asymmetrical GMI characteristics and high sensitivity of 331 Omega/T were obtained with the sensor head. Moreover, it becomes clear that feedback control is possible with a conductive line fabricated on the sensor head. It is considered that small clearance between the sensor head and recording media can be realized by the thin-film head structure.
机译:制作了由铁/反铁磁交换耦合多层膜组成的非对称巨磁阻抗(GMI)传感器头,并测量了其传感器特性。通过射频溅射,在五个50nm厚的反铁磁Ir-22-Mn-78层之间,将五个100nm厚的铁磁Ni-78-Fe-13-Cu-5-Mo-4层多层。传感器头获得了不对称的GMI特性和331 Omega / T的高灵敏度。而且,很明显,利用在传感器头上制造的导线可以进行反馈控制。认为可以通过薄膜头结构实现传感器头和记录介质之间的小间隙。

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