High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

摘要

This is the accepted manuscript of a paper published in Applied Physics Letters (Wu Y, Hasan T, Li X, Xu P, Wang Y, Shen X, Liu X, Yang Q, Applied Physics Letters, 2015, 106, 051108, doi:10.1063/1.4907568). The final version is available at http://dx.doi.org/10.1063/1.4907568