One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

摘要

SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.