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Electromechanical properties and dielectric behavior of (Bi 1/2Na1/2)(1-1.5x)BixTiO3 lead-free piezoelectric ceramics

机译:(Bi 1 / 2Na1 / 2)(1-1.5x)BixTiO3无铅压电陶瓷的机电性能和介电性能

摘要

Bismuth doped bismuth sodium titanate ceramics [(Bi1/2Na 1/2)(1-1.5x)BixTiO3, x = 0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm2 and a relatively low coercive field of 71 kV/cm, while their d33 and kp reach a maximum value of 95 pC/N and 21%, respectively.
机译:制备了铋掺杂的钛酸钠铋陶瓷[(Bi1 / 2Na 1/2)(1-1.5x)BixTiO3,x = 0至0.06],并研究了其对微观结构和介电性能的影响。所有的Bi掺杂陶瓷均表现出具有菱形对称性的钙钛矿结构单相。通过掺杂Bi可以显着降低极化泄漏电流,从而有利于陶瓷的极化过程。 Bi的掺杂增强了压电性能并增加了陶瓷的介电常数和介电损耗。在2 mol%的Bi掺杂水平下,陶瓷表现出47μC/ cm2的大剩余极化率和71 kV / cm的相对较低的矫顽场,而d33和kp达到最大值95 pC / N和21% , 分别。

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